Abstract
The authors demonstrate the fabrication of SiC nanocrystals on silicon by carbon ion implantation into silicon followed by electron beam annealing at 1000°C. A continuous asymmetric, pyramidal ridge around 20nm in height is observed at the boundary between the implanted and unimplanted regions. Adjacent to the ridge within the implanted region appears a trough which is continuous around the perimeter of the implanted/unimplanted boundary. The surface of the unimplanted region consists of pyramidal structures with an average height of 5–10nm which cover the entire surface.
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