Abstract
Thermal wave (TW) studies of ultra-shallow junctions (USJ) formed by ion implantation into a semiconductor wafer followed by rapid thermal annealing (RTP) are described. It is shown that using the TW technique allows for a simultaneous determination of the most important USJ parameters—depth and profile abruptness. In a TW-based system, the USJ depth is obtained using the quadrature component of the TW signal while determination of USJ profile abruptness is based on the analysis of the TW quadrature and in-phase components measured at two different pump-probe beam offsets. Experimental results for junction depth and abruptness obtained on a set of B+-implanted, RTP-annealed USJ samples show better than 0.99 correlations to the corresponding secondary ion mass spectroscopy data.
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