Abstract
A rigorous computer model was developed to study growth rate uniformity in MOVPE. Two different horizontal reactors were modeled in this study as a function of carrier gas composition, flow rates, and pressure. The accuracy of the simulation was verified by comparison to experimental growth rates and published gas temperature measurements. Large recirculation patterns caused by buoyancy were found in the gas for several operating conditions. These recirculation patterns affected the gas temperature, growth rate, and deposition uniformity. Furthermore, time-dependent simulations showed that recirculation reduced interface abruptness. A simple analytical formula is derived for predicting buoyant recirculation in horizontal reactors. Reduced height over the susceptor and reduced pressure are very effective in eliminating this problem.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call
