Abstract
In this paper, we report the possible transient behavior for 20nm partially depleted silicon-on-insulator (PD SOI) n-channel MOSFET studied using Synopsys TCAD program. Tunnelling model is set at Si/SiO2 interface by varying front gate oxide. Parasitic floating body effects also have been observed in the device behavior for both linear and saturation regions, the magnitude of these effects depends on the front gate oxide thickness. For 4nm gate oxide thickness, the parasitic floating body effect is dominant at low drain voltage.
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