Abstract
AbstractSimulations of the characteristics of laser diodes (LD) with non‐polar and InGaN multi‐quantum‐wells (MQW) have been conducted in multi‐dimensional drift‐diffusion model. The strain coefficients of the QWs of arbitrary crystal‐orientations are obtained by minimizing the total strain energy. Electronic structure and optical gain of non‐polar InGaN QWs are calculated by the 6x6 k.p theory. Finally by integrating the gain and effective mass models of non‐polar InGaN QW into our LASTIP software package, we simulated the performance of the laser diodes with non‐polar MQWs, and the results are compared with the experiments. (© 2010 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
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