Simulation Study on Quantum Capacitances of Graphene Nanoribbon VLSI Interconnects

Abstract

In this paper, study on the capacitive effects of Graphene nanoribbon (GNR) in VLSI interconnect has been studied as a function of GNR width, Fermi function and gate voltage. The quantum capacitance of GNR has been simulated in terms of Fermi function for three different values of insulator thickness — 1.5[Formula: see text]nm, 2[Formula: see text]nm and 2.5[Formula: see text]nm. After that, quantum capacitance is studied in both degenerate and nondegenerate region with respect to Fermi function and gate voltage of range 1–5[Formula: see text]V. Then, the total capacitance of GNR is studied as a function of gate voltage of [Formula: see text][Formula: see text]–5[Formula: see text]V range at degenerate and nondegenerate regions, where width of GNR is considered 4[Formula: see text]nm. Finally, the total capacitance of GNR is studied in both regions with varying GNR width, considering fixed gate voltage of 3[Formula: see text]V. After analyzing these simulations, it has been found that GNR in degenerate region shows nearly steady capacitance under a certain applied gate voltage.