Measurement of gate delay in armchair graphene nanoribbon considering degenerate regime

Abstract

Graphene nanoribbons (GNRs) are considered as a tremendous discovery in the beginning of 21st modern science. For the demanding of using semiconducting electronic properties armchair GNRs are born. To observe the electron transport through A-GNR based field effect transistor one of the important properties of these device is capacitance through channel and dielectric substance, gate delay. The classical capacitance which is only determined by GNR width and insulator thickness failed to discuss the behavior of electron through channel. In these factor quantum capacitance which works in any integer nature of gate voltage is termed as degenerate regime quantum capacitance. Including above all mentioned capacitance gives a total capacitance in gate which is faced by electron. Upon this observation delay faced by carrier for gate capaciatnce and cut off frequency can be observed without considering other capacaitance. This work presents an investigation and calculation of the bandgap structure and the classical and quantum capacitance in degenerate regime of A-GNRs. Then using calculated value the gate delay will be observed for corresponding gate voltage. At last we will measure cutoff frequency neglecting other capacitance formed in A-GNR based FET.