Simulation study on ferroelectric layer thickness dependence RF/Analog and linearity parameters in ferroelectric tunnel junction TFET

Abstract

In this paper, the impact of ferroelectric layer thickness (tFE) on input drain current characteristic is reported in ferroelectric tunnel junction (FTJ) TFET through TCAD simulator. In consecutive step, the RF/analog parameters such as transconductance (gm), output conductance (gd), gain (gm/gd), gate capacitance (Cgg), cut off frequency (ft), transconductance generation factor (TGF ​= ​gm/ID), transconductance frequency product (TFP), gain frequency product (GFP), and gain transconductance frequency product (GTFP) are highlighted as a function of tFE in FTJ TFET. Finally, the effect of tFE on linearity characteristic like harmonics of gm (gm2 and gm3), voltage intercept points (VIP2 and VIP3), power intercept point (IIP3), and 1-dB compression point are presented in FTJ-TFET. Results revealed that the scaling of tFE has noticeable influence on RF/analog and linearity performance in FTJ-TFET. The reduction in tFE improves the RF/analog performance, whereas, suppressed the linearity characteristic. Moreover, a comparative study of FTJ-TFET with ferroelectric TFET (F-TFET) and conventional TFET in terms of transfer characteristic, BTBT rate, eDensity, and electric field are highlighted through numerical simulator.