Abstract
In this article, a novel bipolar-field-effect composite power transistor, called SiC GCBT (Silicon Carbide Gate-Controlled Bipolar-field-effect Composite Transistor) is presented and studied. The structure is characterized by the use of the base-gate short connection mode, instead of the conventional base-source short connection mode in SiC Vertical Double-diffusion MOSFET (VDMOS). It found that the device can obviously improve many problems of SiC Insulated Gate Bipolar transistor (IGBT) caused by the p-type substrates and eliminate the latch-up effect, having very bright prospects in high power and low frequency applications. The dynamic and static characteristics of the SiC GCBT are studied in detail and compared with SiC VDMOS, SiC IGBT and Si IGBT. Through comparative studies, the analysis results indicate that SiC GCBT has superior static characteristics, including a higher breakdown voltage, a relatively smaller threshold voltage (2.98V) and lower on-state voltage drop, and a much larger on-state current which is 28% higher than that of Si IGBT and 71% higher than that of SiC IGBT. In terms of dynamic characteristics, SiC GCBT has the shortest turn-on time, and the turn-off characteristics of the device are also improved compared with SiC and Si IGBT.
Highlights
As one of the most promising semiconductor materials, Silicon carbide (SiC) has become especially popular in the field of high-power device research, because of its excellent properties of materials, such as wide band-gap, high critical breakdown electric field and high electron saturation speed [1]
In order to study the main characteristics of SiC GCBT, two-dimensional numerical simulation was performed by ISE Technology Computer Aided Design (TCAD) [11]
At the forward current density (ICEsat) of 2 × 10−4 A/μm, the diode turn-on voltage (Von) of SiC Insulated Gate Bipolar Transistor (IGBT) is 3.26 V, while the Von of SiC GCBT is 1.88V, a decrease of 42%, which means that the problem of high diode turn-on voltage caused by wide band-gap in SiC IGBT has been improved obviously
Summary
As one of the most promising semiconductor materials, Silicon carbide (SiC) has become especially popular in the field of high-power device research, because of its excellent properties of materials, such as wide band-gap, high critical breakdown electric field and high electron saturation speed [1]. In order to solve these difficulties, a gate-controlled bipolar-field-effect composite vertical double-diffused transistor, called SiC GCBT, is proposed [9] This device structure is based on the original SiC VDMOS, which only changes the electrode connection mode, by replacing the original base-source short connection mode with the base-gate short connection mode. The static and dynamic characteristics of SiC GCBT are studied and discussed with SiC VDMOS, SiC IGBT and Si IGBT in detail by Technology Computer Aided Design (TCAD) simulation It found that compared with the SiC IGBT, the structure can significantly alleviate the problems which caused by the p-type substrates and the diode turn-on voltage of 3.2V and prevent the latch-up effect. These static and dynamic performances help to improve power-handling capability and make it possible for this device to improve energy conversion systems in terms of high power
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