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Abstract
Simulation study has been made to explain the spectral feature of total electron yield (TEY) spectra of some LiF/Si/LiF multilayer around Si-L edge measured previously for various angles of incidence. The existing formula for the total electron yield has been extended. Optical constants used for the direction perpendicular to the Si layer are those of crystalline Si and those for the direction parallel to the layer is trial ones simulating those of porous Si. The simulated TEY spectra reproduced well the experimental results.
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