Abstract

In this paper, a MEMS piezoelectric cantilevered vibration energy harvester based on c-axis tilted AlN thin film is investigated. Based on basic piezoelectric equations and static analysis of cantilever beam, the equations for generated energy (E) and open circuit voltage (Vo) were derived, and simulations were carried out to study the effects of geometry parameters and c-axis tilted angle. Results show that E and Vo of energy harvesters are greatly dependent on c-axis tilted angle and geometry parameters, while the coupling between c-axis tilted angle and geometry parameters is not strong. For a given structure size, E and Vo can be almost simultaneously improved by controlling c-axis tilted angle; compared with the case of normal c-axis angle, E with optimal c-axis tilted angle can be amplified by more than 3 times, and the Vo is amplified by about 2 times. E or Vo could be further improved by geometry parameters, while there is trade-off between them. These results can be used for the design and application of piezoelectric cantilevered vibration energy harvester.

Highlights

  • Piezoelectric vibration energy harvester(PVEH) based on MEMS have been proven to be an attractive technology for replacing chemical batteries or complex wiring in micro sensors/microsystems.[1]

  • It was found that environmental sources have relatively low level of vibration, normally 1 g of acceleration;[8] further considering the reducing due to its small size, the output power of AlN-based MEMS VEH will be an issue for real application

  • Based on basic piezoelectric equations, a quasi-static analysis is performed for deriving the equations for predicting the open circuit voltage and generated energy of c-axis tilted AlN VEH; simulation is conducted for understanding the effect of c-axis tilted angle and geometry parameters on the performance; conclusion is made based on the result and discussion

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Summary

INTRODUCTION

Piezoelectric vibration energy harvester(PVEH) based on MEMS have been proven to be an attractive technology for replacing chemical batteries or complex wiring in micro sensors/microsystems.[1]. The output voltage and power is proportionately amplified, but the power density is not enhanced due to the increasing volume.[9] A more straight way to improve performance is to enhance piezo properties, since the lower piezoelectric coupling at identical geometries, resulting in smaller electrical energy content for a given elastic energy in the device. For this purpose, method of material doping has been suggested. Based on basic piezoelectric equations, a quasi-static analysis is performed for deriving the equations for predicting the open circuit voltage and generated energy of c-axis tilted AlN VEH; simulation is conducted for understanding the effect of c-axis tilted angle and geometry parameters on the performance; conclusion is made based on the result and discussion

MODELING
SIMULATION
RESULTS AND DISCUSSION
CONCLUSIONS
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