Simulation Study of High-Speed Wafer Rotation Effects in a Vertical Reactor for 4H-SiC Epitaxial Growth on 150 mm Substrates

Abstract

The effects of high-speed wafer rotation for 4H-SiC epitaxy in newly developed 150 mm vertical reactor is investigated by simulation analysis. The simulation model shows a good agreement with experimental results. It is revealed that a combination of high-speed wafer rotation as high as 1000 rpm and relatively high system pressure of 267 mbar is effective to reducing boundary layer thickness above the 4H-SiC wafer, and greatly enhances the epitaxial growth rates. The growth rate increase ~2 times using the combination of high-speed wafer rotation and relatively high system pressure.