Simulation study of chalcogenide perovskite (BaZrSe3) solar cell by SCAPS-1D

Abstract

Chalcogenide perovskites have received much attention in the past few years as a potential candidate for various energy conversion applications since they are extremely resilient, abundantly accessible on Earth, and harmless. It is always worth having insight into computational data of solar cell parameters obtained from designing the chalcogenide perovskite-based solar cell devices before going for real experiments. In this perspective, numerical computations are carried out with the SCAPS-1D simulator to create solar cells based on chalcogenide perovskites. A flexible architecture has been suggested for this work: Fluorine-doped tin oxide, titanium dioxide (TiO2) as an ETL, SpiroOMeTAD as an HTL, barium zirconium selenide (BaZrSe3) as an absorber layer, and gold as a metal back contact. The simulations were carried out using the AM 1.5G solar spectrum in order to enhance the suggested solar cell's performance. The effect of doping concentration and bandgap on the absorber layer is studied. The doping concentration of BaZrSe3 varied from 1013 to 1019 cm−3, and the results show that FF (fill factor) and efficiency increased whereas Voc (open circuit voltage) and Jsc (short circuit current density) decreased. Similarly, the bandgap of BaZrSe3 varied from 1.00 eV to 1.30 eV, and the results show that Voc, Jsc, and efficiency decreased. Further, FF increases with increasing bandgap. The feasible challenges that may be experienced while improving chalcogenide perovskites are also discussed.