Abstract
Trapezoid-shape (T-S) defects on epilayer surfaces, which include two kinds of the giant step bunching (GSB), are one of killer defects for MOSFETs. We have investigated the generation mechanism of the two GSBs using "step kinetics simulator" we developed. The simulator has reproduced the behavior of the GSBs. Based on results from the simulation, we have discussed the generation mechanism of the two GSBs.
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