Abstract

In this paper, new theory of device failure for MOSFET-Mode IGBTs is presented, for the first time, based on large scale 3D & 2D TCAD simulations. It was found that current filaments appear when the impact ionization in the anode side exceeds a critical avalanche generation rate. The current filamentation occurs because there exist two solutions: state of current filaments and state of uniform current flow beyond the critical avalanche generation rate. Below the critical avalanche rate, there is no state of current filaments, and the device is safe. The calculated results successfully explain the previous experimental results of device failure.

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