Abstract
In this paper, a new theory of current filament formation in MOSFET-Mode IGBTs is presented, for the first time, based on large scale 3D & 2D TCAD simulations. It was found that current filaments appear because the total collector current increases while current filaments are growing. The total collector current of the state of filament is larger than that of the state of uniform current flow. Current filament grows because of positive feedback mechanism when the avalanche generation rate exceeds a critical value even when the collector emitter voltage is constant. Adoption of the lightly doped N-buffer reduces the maximum current density in the current filament and improves short-circuit withstanding capability of MOSFET-Mode IGBT.
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