Simulation on a Novel Body-Driven Silicon-on-Insulator Metal-Oxide-Silicon Field-Effect-Transistor for Sub-0.1 µm Small Logic Swing Operation

Abstract

A body-driven silicon-on-insulator metal-oxide-silicon field-effect-transistor (body-driven SOI-MOSFET, BD-MOS) is proposed, and the device characteristics are estimated using a device simulator. This device can remove excess holes within several picoseconds. Additional body contact, which requires additional device area, is not required for removing holes. A small S factor (76 mV/dec.) and a small Vth roll-off (ΔVth=15 mV for ΔVd = 0.4 V) were obtained for the channel length of 0.08 µm, without using very thin gate oxide. An enhancement operation and the large drain current required for complementary-MOS(CMOS)-compatible circuits are achieved.