Simulation of Ultrathin Body Silicon-on-Insulator Metal–Oxide–Semiconductor Field-Effect Transistors Based on Drift-Diffusion Model Incorporating an Effective Potential

Abstract

We applied an effective potential method to drift-diffusion (DD)-based simulation of the threshold voltage characteristics for ultrathin body silicon-on-insulator (UTB-SOI) metal–oxide–semiconductor field-effect transistors (MOSFETs). Comparisons were made between simulated and measured threshold voltage and subthreshold swing characteristics as functions of silicon body thickness and gate length. A good agreement was obtained between threshold voltage and silicon body thickness characteristics simulated by the effective potential method and those calculated by a semianalytical model considering quantum effects. It was concluded that a DD-based simulator incorporating the effective potential method would be very useful for designing nanoscale UTB-SOI MOSFETs.