Abstract
Computer simulation has been performed to investigate the transport and energy relaxation of photoelectrons in the near-surface layers of nanostructured and crystalline silicon dioxides in the presence and absence of an electric field. Calculations have shown that nanostructured samples have a shorter hot-electron thermalization time and exhibit weaker influence of an electric field on the electron energy relaxation process than the bulk crystal. The size effect calculated in terms of electron thermalization time is most pronounced at particle sizes less than 5 nm.
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Schedule a callMore From: Journal of Surface Investigation. X-ray, Synchrotron and Neutron Techniques
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