Simulation of the Temperature Dependence of Hall Carriers in Al Doped 4H-SiC

Abstract

A global minima search weighted and non-weighted least squares algorithm has been employed for a comparative study of various possible models to describe electrical properties of high dose Al implanted 4H-SiC. A wide range of experimental data has been taken from literature to demonstrate validation of the model. It was found that a single activation energy level, a temperature dependent Hall scattering factor and a degeneracy factor equal to 4 lead to a satisfactory fitting of experimental Hall data up to an Al substitutional density of 1020cm 3 in 4H SiC.