Simulation of the Squeeze Film Damping in a RF MEMS Switch

Abstract

Two different dynamic models have been presented to investigate the transient mechanical response of a RF MEMS switch under the effects of squeeze-film damping based on a modified Reynolds equation. Both the perforated and non-perforated structures are built for comparison. The models include realistic dimensions. The surface pressure, the damping force, and the tip displacement are simulated in three different ambient pressures, such as 500Pa, 5kPa, and 0.05MPa. The result shows that the increased damping leads to a substantial decrease in oscillation with increasing pressure for the non-perforated structure. Compared with the perforated pad, there is a much larger damping force acts on the non-perforated surface, and an obvious decrease in damping force with increasing pressure.