Abstract
This paper demonstrates simulation tools for edge-emitting multiple-quantum-well (MQW) lasers. Properties of the strained MQW active region are simulated by eight-band kp calculations. Then, a two-dimensional simulation along the transverse cross section of the device is performed based on a drift-diffusion model, which is self-consistently coupled to equations for the optical field. Furthermore, a method is described that allows for an efficient quasi-three-dimensional simulation of dynamic properties of multisection edge-emitting lasers.
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