Abstract
This paper investigates the luminescence properties of InP/InGaAsP multiple quantum well (MQW) laser active regions. Room temperature photoluminescence studies were performed on doped and undoped active regions before fusion, after fusion, after thermal cycling, and after rapid thermal annealing. It is shown that quantum well luminescence intensity degrades considerably after wafer fusion. The introduction of a superlattice defect blocking layer at the fusing surface of the MQW active region not only prevents degradation of the luminescence, but actually improves the luminescence of the MQW active region through the fusion process by a factor of four.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
