Abstract
In this work, integrated systems engineering technical computer aided design software (ISE-TCAD) has been used for Si power MOSFETs to model and simulate under room temperature (300 K) and liquid nitrogen temperature (77 K). A computer-generated model is developed and a variety of parameter extractions are performed. Then, particular regions of the power MOSFET are modified and reevaluated for a comparison of parameter analysis. It is shown that, for this device, as the temperature decreases, the on resistance decreases and transconductance increase by three times as does epitaxial layer mobility. However breakdown voltage and threshold voltage deteriorate slightly.
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