Simulation of radiation effects on In0.52Al0.48As and In0.53Ga0.47As by low energy He ion

Abstract

"In this article, influence of He ions irradiation on In0.52Al0.48As and In0.53Ga0.47As materials with the energies ranging from 50 to 200 keV at normal incidence, including the distributions of the He ions, ionizing energy loss, vacancy, and backscattering ion number, is studied through the simulation. The calculated results show that the peak position of He ion distribution moves to the deeper depth with increasing incident energy and the distribution curve conforms to Bragg distribution. The distribution of the ionizing energy loss induced by He ions is almost constant first and then sharply drops with increasing energy induced by recoil atoms conforms to Bragg distribution. The numbers of vacancies increase with increasing energy and the As vacancy is the prominent vacancy for these two materials. The number of phonons induced by recoil atoms is much higher than that induced by the He ions. The total numbers of the backscattering for the In0.52Al0.48As and In0.53Ga0.47As all decline as the energy is increases and the value for InGaAs is always higher than that the He ions. The higher numbers of backscattering ions are obtained for InAlAs. "