Abstract
In this study, the structure being investigated consists of periodic layers of In[Formula: see text]Ga[Formula: see text]As that have a defect region in air holes and GaAs. Using the finite-difference time-domain method (FDTD), we show that the influences of hole radius on the [Formula: see text]-factor, frequency of defect region and the defect band structure. Also, we investigate property of the defect region on the bandgap structures.
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