Abstract
In this paper, the structure being investigated consists of periodic layers of InGaP containing a defect region in air hole and GaAs. Finite difference time-domain calculations were performed to show the influences of hole radius on the group velocity ( $$ V_{g} $$ ), quality ( $$ Q $$ ) factor and transmission of the structure. As well as effect the hole radius deviation on the $$ Q $$ factor. Also, we will investigate property of the defect region on the band structures.
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