Abstract
The extremely low leakage, fast response, and excellent thermal conductivity of diamond facilitate its potential application in pulse power switching devices. In this study, we investigated the static and transient characteristics of diamond avalanche diodes (DADs) via 2-D device simulation. DAD is based on a Schottky barrier diode (SBD) structure. The static breakdown voltage is 590 V. Under an input pulse voltage with a peak voltage of 2400 V and a rise time of 2 ns, the output voltage on a 50- <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$\Omega $ </tex-math></inline-formula> load driven by the device has a peak value of 1.83 kV and a rise time of 1.282 ns. The behavior and mechanism of the sharpened rising pulse response waveform are analyzed phase by phase. The generation and dynamic changes in carrier plasma inside the device and their effect on the altered electric field, impact generation, and carrier density, as well as the transient output of the device are investigated.
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