Abstract
The PSPICE simulator is extended to simulate an optoelectronic integrated circuit (OEIC) composed of a vertical-cavity surface emitting laser (VCSEL) and two MOSFETs with 0.8 /spl mu/m channel length. A comprehensive three-level model for a quantum-well semiconductor laser diode is used to build a sub-circuit for the VCSEL. The measured DC and transient response of the OEIC are used to extract the model parameters. Simulation results using these parameters are compared with measurements and a good agreement is obtained. Enhancements in the optical conversion efficiency and modulation bandwidth of the OEIC is predicted by simulation if a 0.5 /spl mu/m channel is used.
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