Abstract

Optoelectronic integrated circuits (OEICs) containing 32 X 32 arrays of smart pixels on 512 micrometers centers are under development for use in high density input/output (I/O) applications. Each smart pixel will comprise a monolithically integrated detector, a CMOS circuit, and a flip-chip bonded, oxide confined GaAs/AlGaAs vertical cavity surface emitting laser (VCSEL). The CMOS circuit will include a receiver, a digital section, and a laser driver. The digital sections of adjacent pixels will be connected in series to provide high speed 1D and 2D optical I/O into the smart pixel array. This low-power architecture will combine functionality, testability, and electrical/optical access in a single compact circuit. The OEIC will serve as a robust optoelectronic device and also as a test-bed upon which to develop techniques for flip-chip bonding the GaAs/AlGaAs VCSELs onto CMOS circuitry. The smart pixel device will operate at a speed of up to 1 GHz. The 32 X 32 array will consume < 10 W.

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