Abstract
The Simulation of the non-equilibrium behavior of the charge transport in semiconductor devices is usually based on a coupling of the semiclassical Boltzmann transport equation with the Poisson equation. We follow this successful approach but extend it with the Schrodinger effective mass equation leading to a Schrodinger-Poisson-Boltzmann system for the description of the non-equilibrium electron transport in silicon quantum wires. The silicon quantum wire is joined with a substrate, so that the phonons are non-confined. We take into account zero- and first order intra- and intervalley scattering mechanisms.
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