Simulation of nanometer-scale MOSFET's with ultra-thin gate oxide including full 2-dimensional quantum mechanical effects and gate tunneling current

Abstract

A new simulator is developed including Quantum Mechanical Effects (QMEs) in the whole channel and gate tunneling current along the gate oxide. Schrodinger equation is solved using Modified Airy Function (MAF) method in the whole device including gate electrode, oxide and substrate and thus QMEs and tunneling effects can be taken into consideration at the same time. The simulator has high efficiency and accuracy. Advanced devices are simulated emphasizing QMEs and tunneling current through gate oxide.