Abstract
In this work, 2D physical modeling and simulation of Molybdenum disulfide based MOSFET device using COMSOL multiphysics software is carried out. The impact of dielectric materials such as SiO2 and Al2O3 on the performance of FET are investigated. Threshold voltage (VT), sub-threshold swing and on/off ratio are some of the electrical parameters studied in this work. The values of channel doping concentration, choice of metal work function and dielectric material, and the corresponding thickness of the gate material, are systematically varied to arrive at the device threshold voltage. FET device with 50nm thick Al2O3 gate insulator exhibits a threshold voltage of 1V and an on/off ratio of 107, whereas the device with SiO2 as the gate material with the same thickness exhibited higher threshold voltage of 2.8V and lower on/off ratio of 106. The polynomial first order technique in the MATLAB curve fitting tool is utilized to determine the relation between VT and gate oxide thickness.
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