Abstract
A systematic investigation of the impact of Ti metal gate work function variability (WFV) on various electrical parameters against variation in gate oxide thickness in both step-FinFET and conventional FinFET (C-FinFET) using technology computer-aided design simulation is reported. It is seen that WFV of Ti metal gate has a significant influence on electrical parameters such as threshold voltage ( σV T ), subthreshold swing ( σ SS), on current ( σI on ), and off current ( σI off ) with variation in gate oxide thickness. It is also perceived that the impact of WFV of Ti gate material in step-FinFET is lesser than C-FinFET. Histograms of various electrical parameters are presented for better understanding of the statistical impact of WFV of Ti metal gate in both the structures.
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