Abstract
The processes occuring in thin films, in particular such as silicide formation processes, are rather difficult to control using analytical measurements. Such processes are widely used for the formation of metallization layers and usually require the precise control of film thickness, atomic composition, atomic distribution profiles, phase composition and electric resistance 1. The absence of model concepts of the process of silicide formation hinders the wide use of such processes and makes them labour-consuming ones due to the large number of control measurements.
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