Platinum silicides formation on heavily doped silicon by ion mixing

Abstract

The process of Pt silicide formation on heavily As doped (N As - 10 21 cm −3 ) silicon by ion mixing (Ar + , 250 keV, 5 x 10 15 −5 x 10 1 6 cm −2 ) was studied using Rutherford backscattering spectrometry (RBS) and reflection electron diffraction and transmission electron diffraction. It was found that during platinum silicide growth (Pt 3 Si → Pt 2 Si → PtSi) the redistribution of impurity (As), i.e. snowplowing of the part of As atoms into the depth of silicon by the front of growing silicide, takes place. A similar effect was observed during formation of Pt and Pd silicides on As doped silicon at annealing. The impurity (As) migration in the process of silicide formation by ion mixing was compared with As behavior in Pt/Si structure during annealing in vacuum at 400°C.