Abstract
Degradation in the pulsed responsivity of an In0.53Ga0.47As on InP p-i-n photodiode due to high-energy particle irradiation induced trapping and recombination centers is simulated using quasi-three-dimensional iterative solutions to the drift-diffusion and Poisson equation in the presence of generation-recombination terms. Device physics models necessary to simulate a realistic device are discussed, and the impulse response as a function of trap density is reported for defects uniformly distributed in the InGaAs region. At high trap densities, a sharp decrease in the pulsed responsivity and an increase in dark current can be correlated with the formation of a double-field profile similar to that observed in space charge sign inverted Si and GaAs particle detectors.
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