Simulation of growth with diffusion in the kinetic BCSOS model

Abstract

A simple Monte Carlo simulation of crystal growth, based on a kinetic version of the BCSOS model with diffusion, is discussed as a function of thermodynamic parameters (temperature T and disequilibrium Δμ). Two regimes are studied. In Regime I, close to equilibrium, deposition competes with desorption. It is shown that this regime splits into two subregimes, Ia and Ib, with very different properties, according to whether a range of coverages where desorption prevails exists or not. In Regime II, far from equilibrium, deposition competes with diffusion: a few significant stochastic properties of the growth process are discussed.