Abstract
In recent years, finite element analysis is increasingly adopted to simulate the mechanism of metal oxide semiconductor (MOS) resistive gas sensors. In this article, the chemical reaction engineering module in the COMSOL Multiphysics tool is used to describe the dynamic equilibrium process of oxygen ions in the sensor. The boundary conditions of temperature transfer, conductivity model, and mass transfer are applied to simulate the convection, diffusion, and penetration processes. The response of the sensor at different temperatures (445 K–521 K) and different target gas concentrations (1–500 ppm) is simulated. In this paper, the dynamic model of oxygen ions is used creatively as a bridge between gas concentration and sensor response instead of the traditional direct parameter fitting method. The simulated result of the surface oxygen ion control and permeability control model of the MOS gas sensor shows a good agreement with the real sensor. For explaining the principle of metal oxide semiconductor gas sensors simulations has been performed on COMSOL Multiphysics software. The proposed method in this paper is based on the underlying transfer logic of the sensor signal, it is expected to predict the sensor signal and assist the sensor design.
Highlights
In recent years, finite element analysis is increasingly adopted to simulate the mechanism of metal oxide semiconductor (MOS) resistive gas sensors
Accurate simulation of MOS gas sensors is essential for device design. Reference[15,16] simulate the impact of sensor microstructure on the response but overlook the chemical reaction occurring on the sensor’s surface. Reference[17] adopts a circuit structure to equivalently replace the physical and chemical reactions of the sensor surface, which simplifies the sensor signal conduction model and, the conversion of the sensor between chemical signals and physical signals
We model the sensor and compare the simulation data with the experimental d ata[23]
Summary
Finite element analysis is increasingly adopted to simulate the mechanism of metal oxide semiconductor (MOS) resistive gas sensors. The simulated result of the surface oxygen ion control and permeability control model of the MOS gas sensor shows a good agreement with the real sensor. The finite element analysis instrument of COMSOL was adopted to simulate and analyze the time response characteristics of the MOS gas sensor. The response of MOS sensor is affected by a series of factors, such as the number of surface oxygen ions, permeability[25], sensor film thickness, temperature, and gas concentration. R eference[26,27] shows that the oxygen ion concentration on the sensor surface changes with different annealing temperature and noble metal doping, and the resistance value of the sensor in the air environment.
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