Simulation of Electric Fields in Non-Homogeneous Semiconductor Structures During Probe Measurements

Abstract

Non-conventional materials for nanoelectronics and power microelectronics are epitaxial, diffusion, and ion-doped semiconductor structures, as well as composite structures with mismatched film and substrate lattices. These materials of electronic technology are used in the creation of transistor structures, radiation sensors, memory elements. The active use of non-homogeneous semiconductors requires a qualitative description of the distributions of electric fields in their practical implementation in real connection schemes, as well as the development and improvement of methods for measuring the parameters of these materials. The purpose of this work is to study the effect of inhomogeneities in the distribution of impurities in anisotropic semiconductors on the structure of electric fields in contact measurement methods. A theoretical scheme for calculating the potential distribution in anisotropic and non-homogeneous conducting materials is considered. A technique for solving a boundary value problem with Dirichlet and Neumann boundary conditions is presented. Expressions are presented in the form of series of analytical functions for the distribution of the electric potential in two-layer conducting anisotropic structures. On the basis of the computer simulation, the importance of taking into account the parameters of inhomogeneity and the tensor nature of conductivity is shown. The constructed models make it possible to determine and qualitatively describe the distributions of electric fields during probe measurements and to study the structure of anisotropy and inhomogeneity.