Abstract
The impurity and electric-field distributions in high-resistivity Si〈W,Au〉, Bi12GeO20, and CdS semiconductors are studied by the local PC method. The applicability of this method to assessing impurity and field distributions is analyzed. For n-Si〈W,Au〉, with the Au dopant completely compensated by shallow donors, the distribution of empty gold centers along the sample is obtained. At low temperature, the electric-field distribution is nonuniform, which is probably due to exclusion at the semiconductor contacts. Both the field and impurity distributions along the Bi12GeO20 and CdS crystals are found to be nonuniform.
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