Simulation of effects of uniaxial stress on the deep level transient spectroscopy spectra of the DX center in AlGaAs alloys

Abstract

Recently the effect of uniaxial stress on the deep level transient spectroscopy (DLTS) of the DX center in AlGaAs alloys have been reported by two separate groups. In both experiments no splitting of the DLTS peak was observed. We have analyzed the experimental results in terms of a large lattice relaxation model in which the DX center can have either a positive or a negative Coulomb energy U. We found that if the symmetry of the DX center depended on its charge state then its DLTS peak was not split by uniaxial stress in contrast to other defects with large lattice relaxation (such as the A center in Si).