Simulation of dynamic growth rate of focused ion beam-induced deposition using Hausdorff distance

Abstract

We develop a numerical simulation describing the dynamic evolutionary deposition associated with the focused ion beam-induced chemical vapor deposition (FIB-CVD) process. It is generally accepted that emitted electrons generated by incident ions trigger the dissociation of precursor molecules adsorbed onto the surface of the substrate or deposit. Therefore, it is essential to detect emitted electrons inside the solid substrate and the deposit, and to calculate the surface positions at which the electrons are emitted. However, this has traditionally been difficult. The Hausdorff distance (HD) is a numerical method enabling rapid calculation of the distance between two objects, and is widely used for pattern-matching and object recognition in image-processing. In our numerical simulation, we use the HD concept to solve the difficulties of determining whether an electron is emitted, and the emission position, during time-dependent deposition. In addition, the modified cellular automata (CA) model was combined with an HD map to simulate deposition over time. We ran a Monte Carlo simulation of the trajectories of ions and electrons. Finally, the simulation results were verified experimentally.