Abstract
Graphene has been one of the most vigorously studied research materials. We have developed a program for simulation of graphene field effect transistor (GFET). In this work, we use the simulation program to explore the performance of graphene FET. The simple model of the graphene FET is based on non-equilibrium Green’s function method and first is implemented by using graphic user interface of Matlab. The current-voltage characteristics of the GFET and affects of channel materials, gate materials, size of graphene FET, temperature on the characteristics are explored.
Highlights
Graphene [1,2,3,4,5,6,7,8] has been one of the most vigorously studied research materials since its inception in 2004
We look more into details of graphene field effect transistor (GFET)
We start by simulating ID-VD characteristics of top-gated graphene field-effect transistors (FETs)
Summary
Graphene [1,2,3,4,5,6,7,8] has been one of the most vigorously studied research materials since its inception in 2004. Experimental [13,14,15,16] and theoretical [17,18,19,20,21] studies have shown that even though being a gapless semi-metallic material, a graphene FET shows saturating current-voltage behaviors. In previous studies [17,18,19,20,21], to describe semiclassical transport of graphene FET at a channel length that a semi-classical Boltzmann transport equation (BTE) is solved self consistently with Poisson equation. Monte-Carlo method and numerical solutions of solving BTE have been implemented, they are limited to twodimensional k-space, which assumes a homogeneous material and it has limitations to describe transport properties in the graphene transistor accurately
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