Abstract
For InGaN laser diodes with emission wavelengths longer than 435 nm, the threshold current density usually increases with the number of InGaN well layers. This phenomenon could be attributed to the dissociation of the high indium content InGaN well layer at a high growth temperature of 750 °C due to a high InGaN dissociation pressure. In this article, the laser performance of the blue InGaN laser diode structures have been numerically investigated with a laser technology integrated program simulation program. The simulation results suggest that the inhomogeneous hole distribution in the quantum wells also plays an important role in the laser performance as a function of the number of InGaN well layers. In addition to the inhomogeneous hole distribution in the quantum wells, the phenomenon and resolution of the electronic current overflow problem in the blue InGaN quantum-well lasers are also investigated.
Published Version
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