Simulation of an inverted perovskite solar cell with inorganic electron and hole transfer layers (Erratum)

Abstract

We use solar cell capacitance simulator-1D to simulate a fabricated inverted perovskite solar cell. The perovskite solar cell employs solution-processed inorganic hole and electron transfer layers. According to our simulations, surface defect densities at the interfaces of the perovskite active layer and inorganic hole/electron transfer materials in solution-based fabrication method are two orders of magnitude greater than that in the vapor deposition fabrication method. Increase of the surface defect densities reduces the circuit current, fill factor, and power conversion efficiency.