Abstract
We report on the results of simulations of the carrier transport processes in THz radiation sources. The current-voltage characteristic, dipole matrix elements and LO-phonon relaxation time were obtained using the Ensemble Monte Carlo method, the shooting and effective mass methods. The electron-longitudinal phonon interaction assumed as a dominant mechanism of the carrier scattering for the current-voltage characteristic. The weakly coupled AlGaAs/GaAs superlattices considered for simulations.
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