Abstract
A ridge-type semiconductor laser with partially formed anti-guiding cladding layers is proposed, and lasing characteristics are simulated. With increases in the height and the width of the partially formed anti-guiding cladding layers, both kink-level and threshold current increase. When the height is 100 nm and the width is greater than or equal to 15 \(\upmu \hbox {m}\) for the partially formed anti-guiding cladding layers, kink-free operation is obtained up to the injected current of 2 A. The lowest threshold current for the kink-free operation is 57.0 mA when the height is 100 nm and the width is 15 \(\upmu \hbox {m}\) for the partially formed anti-guiding cladding layers.
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