Abstract
In this piece of work, a recessed gate field-plated AlGaN/AlN/GaN HEMT on β-Ga2O3 substrate is proposed and its performance characteristics are compared with HEMT structure employing a recessed gate (depth of 25, 30 and 35 nm) without field-plate. The device is simulated to obtain breakdown voltage, microwave frequency characteristics (fT, fmax) and JFOM using Atlas TCAD. The cut-off frequency and maximum frequency of oscillations are 420 and 720 GHz, respectively, which are excellent than those reported in recent studies. For 20 nm gate length, the suggested HEMT achieves the maximum JFOM of 45.3 THz-V. These fT, fmax and JFOM demonstrate that the proposed HEMT on β-Ga2O3 substrate is an excellent candidate for emerging microwave and millimetre wave applications.
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