Simulation, design and integration of 60 GHz Gallium Nitride transceiver into nano-ferrite circulator on-silicon CMOS substrate

Abstract

In this work the design and integration of 60 GHz monolithic microwave integrated circuit (MMIC) transceiver using 0.15 um Gallium Nitride (GaN) Qorvo process that will support the Wireless Gigabit Alliance (WiGig)/802.11ad radio specifications will be presented. The wideband GaN Power Amplifier (PA) can operate at 60–65 GHz with output power of 27 dBm and large signal gain of 23.5 dB. The wideband Low Noise Amplifier (LNA) has a small signal gain of 16 dB with a noise figure (NF) of 1 dB. The GaN PA and LNA are integrated to a nano-ferrite on-silicon CMOS circulator to construct a single front-end transceiver module.